Samuel Graham
Georgia Institute of Technology
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9.2 Investigation of the Impacts of Interfacial Layers on the Degradation of GaN-on-Si HEMTs under Electrical Step Stress Testing
Download PaperLuke Yates, Georgia Institute of TechnologyChien-Fong Lo, IQETingyu Bai, University of California, Los AngelesMark Goorsky, University of California, Los AngelesWayne Johnson, IQESamuel Graham, Georgia Institute of Technology -
11.1 Monitoring the Transient Thermal Response of AlGaN/GaN HEMTs using Transient Thermoreflectance Imaging
Download PaperGeorges Pavlidis, Georgia Institute of TechnologySamuel Graham, Georgia Institute of Technology -
11.4 Gate Resistance Thermometry for GaN/Si HEMTs under RF Operation
Download PaperGeorges Pavlidis, Georgia Institute of TechnologyShamit Som, MACOMJason Barrett, MACOMWayne Struble, MACOMJohn Atherton, MACOMSamuel Graham, Georgia Institute of Technology