Scott Sheppard

Wolfspeed | A Cree Company
  • May 01, 2019 // 4:40pm – 5:00pm

    12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

    Kyle Bothe, University of Alberta
    Terry Alcorn, Wolfspeed | A Cree Company
    Jennifer Gao, Wolfspeed | A Cree Company
    Chris Hardiman, Wolfspeed | A Cree Company
    Evan Jones, Wolfspeed | A Cree Company
    Dan Namishia, Wolfspeed | A Cree Company
    Fabian Radulescu, Wolfspeed | A Cree Company
    Satyaki Ganguly, Wolfspeed | A Cree Company
    Don Gajewski, Wolfspeed | A Cree Company
    Jeremy Fisher, Wolfspeed | A Cree Company
    Scott Sheppard, Wolfspeed | A Cree Company
    Jeffrey Barner, Wolfspeed | A Cree Company
    Jim Milligan, Wolfspeed | A Cree Company
    Bruce Schmukler, Wolfspeed | A Cree Company
    Download Paper

  • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

    Ryan Fury
    Scott Sheppard, Wolfspeed | A Cree Company
    Jeffrey B. Barner
    Bill Pribble
    Jeremy Fisher, Wolfspeed | A Cree Company
    Donald A. Gajewski
    Fabian Radulescu, Wolfspeed | A Cree Company
    Helmut Hagleitner
    Dan Namishia, Wolfspeed | A Cree Company
    Zoltan Ring
    Jennifer Gao, Wolfspeed | A Cree Company
    Sangmin Lee, Wavice Inc.
    Download Paper

  • Commercial GaN Devices for Switching and Low‐Noise Applications

    Raymond Pengelly, Cree Inc.
    Scott Sheppard, Wolfspeed | A Cree Company
    Thomas Smith, Cree Inc.
    Bill Pribble