Sen Huang*
Student Presentation
, Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
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Stability and Temperature Dependence of Dynamic RON in AlN-Passivated AlGaN/GaN HEMT on Si Substrate
Download PaperZhikai Tang, The Hong Kong University of Science and TechnologySen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science -
600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation
Download PaperZhikai Tang, The Hong Kong University of Science and TechnologySen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of ScienceQimeng Jiang, The Hong Kong University of Science and TechnologyShenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd. -
Comparative Study of AlGaN/GaN HEMTs with LPCVD- and PECVD-SiNx Passivation
Download PaperXinhua Wang, Institute of Microelectronics, Chinese Academy of SciencesSen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of ScienceJinhan Zhang, University of Electronic Science and Technology of ChinaYingkui Zheng, Chinese Academy of SciencesKe Wei, Institute of Microelectronics, Chinese Academy of SciencesXiaojuan Chen, Chinese Academy of SciencesGuoguo Liu, Chinese Academy of Sciences -
ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of ScienceQimeng Jiang, The Hong Kong University of Science and TechnologyShu Yang, The Hong Kong University of Science and TechnologyChunhua Zhou, Hong Kong University of Science and Technology -
4.4 Improved Uniformity on E-mode GaN-on-Si MIS-HEMTs Fabrication by High-Temperature Gate Recess Technique
Download PaperJinhan Zhang, University of Electronic Science and Technology of ChinaSen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of ScienceXuanwu Kang, Institute of Microelectronics, Chinese Academy of SciencesXinhua Wang, Institute of Microelectronics, Chinese Academy of SciencesKe Wei, Institute of Microelectronics, Chinese Academy of SciencesYijun Shi, University of Electronic Science and Technology of ChinaQi Zhou, University of Electronic Science and Technology of ChinaWanjun Chen, University of Electronic Science and Technology of ChinaBo Zhang, University of Electronic Science and Technology of ChinaXinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences -
12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer
Download PaperSen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of ScienceQilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaXinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKe Wei, Institute of Microelectronics, Chinese Academy of SciencesXiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaShiping Guo, IQE RF LLCJunfeng Li, Chinese Academy of SciencesXinyu Liu, Institute of Microelectronics, Chinese Academy of SciencesChao Zhao, Chinese Academy of SciencesJinjuan XiangShumin ChaiYankui Li