Shinya Takashima

Fuji Electric Co., Ltd.
  • Recent development of vertical GaN planar MOSFETs fabricated by Ion Implantation

    Masaharu Edo, Fuji Electric Co., Ltd.
    Ryo Tanaka, Fuji Electric Co., Ltd.
    Shinya Takashima, Fuji Electric Co., Ltd.
    Katsunori Ueno, Fuji Electric Co., Ltd.
    Hideaki Matsuyama, Fuji Electric Co., Ltd.
    Yuta Fukushima, Fuji Electric Co., Ltd.

    We have demonstrated the vertical GaN planar-gate MOSFETs fabricated by an ion implantation process.  The fabricated GaN vertical MOSFET shows a specific on-resistance of 2.78 mΩ cm2 and a breakdown voltage of 1200 V, by applying a Mg and N sequential implantation to improve the breakdown voltage of the pn-junction and the control of the MOS channel characteristics on the p-type ion implanted layer.  Consequently, the vertical GaN planar-gate MOSFETs with high breakdown voltage and low on-resistance could be realized by ion implantation process.  On the other hand, there are still many challenges for realizing practical GaN vertical MOSFETs, so continuous development is necessary.

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