A foundry-ready service in 6-inch InP HBT technology has been developed for mass production in this work. Good uniformity of device performance over 6-inch wafer is obtained. Delicate EPI design with trade-off between cut-off frequency (Ft) and breakdown voltage (BVceo) are devoted to satisfy varieties of demands. We achieved Ft of 175GHz with BVceo of 6.6V and Ft of 100GHz with BVceo of 16V to fulfill the requirements in optical communication and RF power amplifier applications. An advanced sub-micron process is introduced to enhance RF performance for further demands in higher frequency region.
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The Study of Heterojunction Bipolar Transistors for High Ruggedness Performance
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Novel Bi-HEMT Technology for LTE Handset Application
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Development of Manufacturable Commercial 6-inch InP HBT
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4.3 The Study of InGaP/GaAs HBT for Ruggedness Characteristics
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May 10, 2022 // 4:00pm
5.1 III-V Semiconductor Devices on 6-inch Wafer for sub-Terahertz Communications
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3.2.4.2024 70 nm GaAs pHEMT for D-band Power Amplifier Application
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