Shuh-Sen Renc
a) Chang Gung University
b) Center National Cheng Kung University
c) Chung Shan Institute of Science and Technology
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Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN/Silicon HEMT Structure
Fu-Chuan Chua, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and TechnologyYing-Jie Tsaia, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and TechnologySheng-Yu Liaoa, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and TechnologyChou-Shuang Huanga, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and TechnologyRay-Ming Lina, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and TechnologySheng-Fu Yub, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and TechnologyShuh-Sen Renc, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology