Shyh-Chiang Shen

Georgia Institute of Technology

  • A Study of Low-Annealing-Temperature Ohmic Contact on n-Type GaN Layers

    Shyh-Chiang Shen, Georgia Institute of Technology
    Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
    Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
    Theeradetch Detchprohm, Georgia Institute of Technology
    Russell Dupuis, Georgia Tech
    Barry Wu, Keysight Technologies, Inc.
    Don D’Avanzo, Keysight Technologies, Inc.

    Typical n-type ohmic contact formation for GaN material systems requires high-temperature thermal processes. The high-temperature process often leads to a rough surface after the annealing step. Low-annealing-ohmic contact is advantageous to prevent undesired surface roughening on the metal stack during this thermal process.  We report an approach to achieve low contact resistance on n-type GaN layers using a nitrogen plasma and a conventional Ti/Al-based metal stacks.  We observed an as-deposit ohmic contact behavior on the n-type contact with a specific contact resistance (rc,sp) in the mid-E-6 Ω∙cm2 range.  The rc,sp was further reduced to  6.8E-7 Ω∙cm2 after an annealing step at 600 oC.

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  • 10a.3 Vanadium-based Ohmic Contact on n-type AlGaN Layers

    Tsung-Ting Kao, Georgia Institute of Technology,
    Xiao-Jia Jia, Georgia Institute of Technology
    Yuh-Shiuan Liu, Georgia Institute of Technology
    Theeradetch Detchprohm, Georgia Institute of Technology
    Russell Dupuis, Georgia Tech
    Shyh-Chiang Shen, Georgia Institute of Technology
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  • May 12, 2022 // 3:20pm

    18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown

    Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
    Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
    Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
    Russell D. Dupuis, Georgia Institute of Technology
    Shyh-Chiang Shen, Georgia Institute of Technology
    Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
    Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
    Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
    Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
    Zhiyu Xu, Georgia Institute of Technology,

    Student Presentation

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  • 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

    Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
    Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
    Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
    Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
    Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
    Zhiyu Xu, Georgia Institute of Technology,
    Theeradetch Detchprohm, Georgia Institute of Technology
    Russell D. Dupuis, Georgia Institute of Technology
    Shyh-Chiang Shen, Georgia Institute of Technology
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  • 7.2.4.2024 Edge Termination Engineering with Shallow Bevel Mesas for Low-Leakage Vertical GaN-based p-i-n Avalanche Photodiode

    Zhiyu Xu, Georgia Institute of Technology,
    Theeradetch Detchprohm, Georgia Institute of Technology
    Shyh-Chiang Shen, Georgia Institute of Technology
    A. Nepomuk Otte, Georgia Institute of Technology
    Russell D. Dupuis, Georgia Institute of Technology
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