Stefano Leone
Fraunhofer IAF
-
7.4 High quality AlGaN/GaN HEMT for RF applications on cold-split thinned 4H-SiC substrates
Stefano Leone, Fraunhofer IAFBirte-Julia Godejohann, Fraunhofer IAFPeter Brueckner, Fraunhofer IAFLutz Kirste, Fraunhofer IAFChristian Manz, Fraunhofer IAFM. Swoboda, Siltectra GmbHC. Beyer, Siltectra GmbHJan Richter, Siltectra GmbHRuediger Quay, Fraunhofer IAF