Stephen Pearton
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May 01, 2019 // 4:50pm – 5:10pm
11.3 Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors
Download PaperPatrick Carey IV, University of FloridaFan Ren, University of FloridaAlbert Baca, Sandia National LaboratoriesBrianna Klein, Sandia National LaboratoriesAndrew Allerman, Sandia National LaboratoriesAndrew Armstrong, Sandia National LaboratoriesErica Douglas, Sandia National LaboratoriesRobert Kaplar, Sandia National Labs, Albuquerque, NMPaul Kotula, Sandia National LaboratoriesStephen Pearton, University of Florida -
8b.4 Investigation of Traps in AlGaN/GaN High Electron Mobility Transistors by Sub-Bandgap Optical Pumping
Tsung-Sheng Kang, University of FloridaYi-Hsuan Lin, University of FloridaShihyun Ahn, University of FloridaFan Ren, University of FloridaErin Patrick, University of FloridaMark Law, University of FloridaDavid Cheney, University of FloridaBrent Gila, University of FloridaStephen Pearton, University of Florida -
10b.2 Recovery in dc Performance of Off-State Step-Stressed AlGaN/GaN High Electron Mobility Transistor with Thermal Annealing
Download PaperByungjae Kim, University of FloridaShihyun Ahn, University of FloridaFan Ren, University of FloridaStephen Pearton, University of FloridaDavid Smith, Arizona State UniversityTsung-Sheng Kang, University of FloridaJunhao Zhu -
18.3.2023 Temperature Independence of Dynamic Switching in 4.8 A /3.6 kV NiO/β-Ga2O3 High Power Rectifiers
Jian-Sian Li, University of Florida, Gainesville, FLChao-Ching Chiang, University of Florida, Gainesville, FLXinyi Xia, University of Florida, Gainesville, FLCheng-Tse Tsai, University of Florida, Gainesville, FLYu-Te Liao, University of Florida, Gainesville, FLStephen Pearton, University of Florida -
18.11.2023 Ionization Thresholds and Residue Removal in Inductively Coupled Etching of NiO/Ga2O3 with Ar and BCl3
Chao-Ching Chiang, University of Florida, Gainesville, FLXinyi Xia, University of Florida, Gainesville, FLJian-Sian Li, University of Florida, Gainesville, FLFan Ren, University of FloridaStephen Pearton, University of Florida -
12.19 – kV-Class Vertical p-n Heterojunction Rectifier Based on ITO/Diamond
H. -H. Wan, University of FloridaC. -C. Chaing, University of Florida, Gainesville, FLJ. -S. Li, University of Florida, Gainesville, FLF. Ren, Dept. of Chem Eng., University of Florida, GainesvilleStephen Pearton, University of FloridaAbstract
ITO layers were sputter-deposited onto commercially available vertical p/p+ diamond structures consisting of 5 μm thick p-type (1.2 × 1016 cm-3) drift layers deposited by Chemical Vapor Deposition on 250 μm thick heavily B-doped (3 × 1020 cm-3) single crystal substrates. The ITO is found to form a type II band alignment allowing Ohmic contact to the p-type diamond and creating a vertical n-p heterojunction. The maximum reverse breakdown of heterojunction rectifiers was ~1.1 kV, with an on-resistance (RON) of 13 mΩ•cm2, leading to a power figure-of-merit of 99.3 MW/cm2. The on-voltage was 1.4 V, diode ideality factor 1.22, with a reverse recovery time of 9.5 ns for 100 μm diameter rectifiers. The on/off ratios when switching from -5 V forward to 100 V reverse were in the range of 1011 to 1012. This is a simple approach to realizing high performance vertical diamond-based rectifiers for power switching applications.