Takehiro Yoshida

Sciocs Company Limited
  • May 01, 2019 // 2:30pm – 2:50pm

    10.3 Fabrication of Gallium Nitride Deep-Trench Structures by Photoelectrochemical Etching

    Hiroshi Ohta, Osaka University
    Naomi Asai, Hosei University
    Takehiro Yoshida, Sciocs Company Limited
    Tomoyoshi Mishima, Osaka University
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  • 4.1 A Wafer-Level Uniformity Improvement by the Substrate Off Angle Control for the Vertical GaN-on-GaN Power Switching Devices

    Fumimasa Horikiri, Sciocs Company Limited
    Yoshinobu Narita, Sciocs Company Limited
    Takehiro Yoshida, Sciocs Company Limited
    Toshio Kitamura, Sciocs Company Limited
    Yukio Abe, Sciocs Company Limited
    Hiroshi Ohta, Osaka University
    Tohru Nakamura, Hosei University
    Tomoyoshi Mishima, Osaka University
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  • 7.2 An Analysis of the Surface Morphology of the GaN-on-GaN Epi Wafers and the Control by the Substrate Off Angle

    Fumimasa Horikiri, Sciocs Company Limited
    Yoshinobu Narita, Sciocs Company Limited
    Takehiro Yoshida, Sciocs Company Limited
    Chikashi Ito, KLA-Tencor Limited
    Varun Gupta, KLA-Tencor Limited
    Anoop Somanchi, KLA-Tencor Limited
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  • 10b.3 Mechanism of Initial Failures in Breakdown Voltage of GaN-on-GaN Power Switching p-n Diodes

    Fumimasa Horikiri, Sciocs Company Limited
    Yoshinobu Narita, Sciocs Company Limited
    Takehiro Yoshida, Sciocs Company Limited
    Hiroshi Ohta, Osaka University
    Tomoyoshi Mishima, Osaka University
    Tohru Nakamura, Hosei University
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