Thaddeus Asel

Air Force Research Laboratory, Wright Patterson AFB, OH, USA
  • Self-Aligned Refractory Metal Gate Scaling in β-Ga2O3 MOSFETs

    Kelson Chabak, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Andrew Green, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Thaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USA
    Shin Mou, Air Force Research Laboratory, Wright Patterson AFB, OH
    Kevin Leedy, AFRL
    Donald Dorsey, Air Force Research Laboratory Materials and Manufacturing Directorate

    This work characterizes the effects of gate-length (LG) scaling in a self-aligned gate (SAG) β-Ga2O3 MOSFET process. Additional performance gains are expected by extending the SAG process from large LG to sub-micrometer dimensions.  This data incorporates LG scaling down to 200 nm to improve device performance in Ga2O3 SAG MOSFETs using a stepper lithography process to define sub-micron gate lengths.

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  • May 12, 2022 // 2:30pm

    16.4 Delta Doping β-Ga2O3 Grown Via Plasma Assisted Molecular Beam Epitaxy Using Germanium

    Thaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USA
    Shin Mou, Air Force Research Laboratory, Wright Patterson AFB, OH
    Erich Steinbrunner, Air Force Research Laboratory, Wright Patterson AFB, OH, USA and Wright State University, Dayton, OH
    Jessica Hendricks, AFRL, Air Force Institute of Technology, Wright State University, Dayton, OH and Southwestern Ohio Council for Higher Education
    Adam T. Neal, Air Force Research Laboratory, Wright Patterson AFB, OH

    Abstract

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