Theeradetch Detchphrom

Georgia Institute of Technology, Atlanta, GA

  • Npn GaN/InGaN Heterojunction Bipolar Transistors Using a Palladium-Based Contact Scheme

    Yi-Che Lee, Georgia Institute of Technology
    Tsung-Ting Kao, Georgia Institute of Technology,
    Jeomoh Kim, Student Presentation
    Mi-Hee Ji, Student Presentation
    Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
    Georgia Institute of Technology, Student Presentation
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  • May 12, 2022 // 3:20pm

    18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown

    Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
    Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
    Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
    Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
    Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
    Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
    Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
    Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
    Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
    Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA

    Student Presentation

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