Tim Hsiao
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Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process
Hsiu-Chen ChangShu-Hsiao Tsai, WIN Semiconductors CorpCheng-Kuo Lin, WIN Semiconductors CorpTim HsiaoSteven ChouC. Chen, Momentive TechnologiesPi-Hsia Wang