Tohru Nakamura

Hosei University

  • 4.1 A Wafer-Level Uniformity Improvement by the Substrate Off Angle Control for the Vertical GaN-on-GaN Power Switching Devices

    Fumimasa Horikiri, Sciocs Company Limited
    Yoshinobu Narita, Sciocs Company Limited
    Takehiro Yoshida, Sciocs Company Limited
    Toshio Kitamura, Sciocs Company Limited
    Yukio Abe, Sciocs Company Limited
    Hiroshi Ohta, Osaka University
    Tohru Nakamura, Hosei University
    Tomoyoshi Mishima, Osaka University
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  • 10b.3 Mechanism of Initial Failures in Breakdown Voltage of GaN-on-GaN Power Switching p-n Diodes

    Fumimasa Horikiri, Sciocs Company Limited
    Yoshinobu Narita, Sciocs Company Limited
    Takehiro Yoshida, Sciocs Company Limited
    Hiroshi Ohta, Osaka University
    Tomoyoshi Mishima, Osaka University
    Tohru Nakamura, Hosei University
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