Tomonori Morishita

Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
  • May 02, 2019 // 11:50am – 12:20pm

    14.4 Crystal growth and wafer processing of 6″ GaAs substrate for Lasers

    Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
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  • 5b.1 Crystal growth and wafer processing of Indium Phosphide 6″ substrate

    Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
    Kazuaki Kounoike, Sumiden Semiconductor Materials Co., Ltd.
    Shinya Fujiwara, Sumiden Semiconductor Materials Co., Ltd.
    Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
    Yoshiki Yabuhara, Sumitomo Electric Industries, Ltd, Itami
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  • 17.2.2023 Development of Laser Diode Grade Si-doped 8-inch GaAs Substrates

    K. Shibata, Sumiden Semiconductor Materials Co., Ltd.,
    K. Aoyama, Sumiden Semiconductor Materials Co., Ltd.,
    M Nishioka, Sumiden Semiconductor Materials Co., Ltd.,
    K. Hashio, Sumiden Semiconductor Materials Co., Ltd.,
    F. Adachi, Sumiden Semiconductor Materials Co., Ltd.,
    S. Fujita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd
    Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
    Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

    17.2.2023_Shibata_SEI_extended_abstract_final

  • 7A.2 – Development of 6-Inch Indium Phosphide Substrates

    Y. Oeki, Sumiden Semiconductor Materials Co., Ltd.
    K. Aoyama, Sumiden Semiconductor Materials Co., Ltd.,
    K. Hashio, Sumiden Semiconductor Materials Co., Ltd.,
    M. Adachi, Sumiden Semiconductor Materials Co., Ltd.,
    Y. Yoshizumi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
    Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
    Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

    7A.2 Final.2025

    Abstract
    In this paper, we report 6-inch indium phosphide (InP) substrates with very low dislocation density produced using SEI’s Vertical Boat (VB) method. The growth conditions have been optimized to reduce crystal defects.