Trevor Martin

IQE Europe, St Mellons, Cardiff, UK
  • May 02, 2019 // 10:30am – 10:50am

    15.1 Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model

    Manikant Singh, University of Bristol
    Serge Karboyan, Nexperia. Manchester, UK
    Hareesh Chandrasekar, Center for Device Thermography and Reliability, University of Bristol, Bristol, UK
    Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
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  • 5a.4 Back Bias Ramping and Photoionization Spectroscopy Analysis of GaN-on-Si HFETs

    Alexander Pooth, University of Bristol
    Michael Uren, University of Bristol
    Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
    Martin Kuball, University of Bristol
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