W. Fan

Momentive Technologies
  • May 11, 2022 // 5:30pm

    11.4 1E7 Hours MTTF At 200°C Of 100V RF AlGaN/GaN-SiC HEMT Through ALT Characterization

    Gabriele Formicone, Integra Technologies, Inc.
    J. Bell, Integra Technologies
    D. Hou, Global Communication Semiconductors, LLC
    S. Wang, Global Communication Semiconductors, Inc.
    D. Wang, Global Communication Semiconductors, Inc.
    J. Burger, Integra Technologies
    W. Cheng, Integra Technologies
    W. Fan, Momentive Technologies
    J. McKay, Global Communications
    D. Mohata, Global Communications

    Abstract

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  • May 12, 2022 // 3:20pm

    18.3 Heater Performance Improvement with Ceramic Coatings for GaN MOCVD Process

    T. Yamamoto, Momentive Technologies
    B. Kozak, Momentive Technologies
    Y. Morikawa, Momentive Technologies
    T. Higuchi, Momentive Technologies
    Y. Matsui, Momentive Technologies
    D. Sabens, Momentive Technologies
    P. Schmidt-Sane, Momentive Technologies
    J. lennartz, Momentive Technologies
    W. Fan, Momentive Technologies
    C. Chen, Momentive Technologies

    Abstract

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