W. John

  • Fabrication Technology of GaN/AlGaN HEMT Slanted Sidewall Gates Using Thermally Reflowed ZEP Resist and CHF3/SF6 Plasma Etching

    K. Y. Osipov, Ferdinand-Braun-Institut
    W. John
    N. Kemf, Ferdinand-Braun-Institut
    S. A. Chevtchenko, Ferdinand-Braun-Institut
    P. Kurpas, Ferdinand-Braun-Institut
    M. Matalla
    O. Kr├╝ger
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