Wanjun Chen

University of Electronic Science and Technology of China

  • 4.4 Improved Uniformity on E-mode GaN-on-Si MIS-HEMTs Fabrication by High-Temperature Gate Recess Technique

    Jinhan Zhang, University of Electronic Science and Technology of China
    Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
    Xuanwu Kang, Institute of Microelectronics, Chinese Academy of Sciences
    Xinhua Wang, Institute of Microelectronics, Chinese Academy of Sciences
    Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
    Yijun Shi, University of Electronic Science and Technology of China
    Qi Zhou, University of Electronic Science and Technology of China
    Wanjun Chen, University of Electronic Science and Technology of China
    Bo Zhang, University of Electronic Science and Technology of China
    Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
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