Wei-Chou Wang

WIN Semiconductors Corp
  • 3.4 An Improved 0.25┬Ám GaN on SiC MMIC Technology for Radar and 5G Applications

    Yi-Wei Lien, WIN Semiconductors Corp
    Wayne Lin, WIN Semiconductors Corp
    Jhih-Han Du, WIN Semiconductors Corp
    Richard Jhan, WIN Semiconductors Corp
    Andy Tseng, WIN Semiconductors Corp
    Wei-Chou Wang, WIN Semiconductors Corp
    Fan-Hsiu Huang, WIN Semiconductors Corp
    Clement Huang, WIN Semiconductors Corp
    Shinichiro Takatani, WIN Semiconductors Corp
    Walter Wohlmuth, WIN Semiconductors Corp
    Download Paper
  • AlGaN/GaN Ohmic Contact Investigation

    Kai-Sin Cho, WIN Semiconductors Corp.
    Chiao-Yi Tsai, WIN Semiconductors Corp.
    Szu-Ting Chen, WIN Semiconductors Corp.
    Cheng-Ju Lin, WIN Semiconductors Corp.
    Yi-Wei Lien, WIN Semiconductors Corp
    Wei-Chou Wang, WIN Semiconductors Corp

    To produce high performance AlGaN/GaN heterostructure field effect transistors for RF power applications, one of the critical control parameters of AlGaN/GaN system is the contact resistance (Rc) of the ohmic metal to AlGaN. In the present study, two important factors for the contact resistance, a Ti3AlN interfacial layer and TiN islands were investigated using phase identification, and morphology as determined by Nano Beam Electron Diffraction (NBD) technique in transmission electron microscopy. Based on our study, both Ti3AlN interfacial layer and TiN islands contribute to ohmic contact behavior in the system.

    Download Paper