Woojin Choi

Seoul National University

  • High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2

    Woojin Choi, Seoul National University
    Hojin Ryu, Student Presentation Seoul National University
    Ogyun Seok, Kumoh National Institute of Technology, Republic of Korea
    Minseok Kim, Student Presentation Seoul National University
    Ho-Young Cha, Student Presentation Seoul National University
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  • The Effects of SF6Plasma and in-situ N2Plasma Treatment on Gate Leakage, Subthreshold Slope, and Current Collapse in AlGaN/GaN HEMTs

    Neung-Hee Lee, Seoul National University
    Woojin Choi, Seoul National University
    Minseong Lee, Seoul National University
    Seonhong Choi, Seoul National University
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