Woojin Choi

Seoul National University

  • High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2

    Woojin Choi, Seoul National University
    Hojin Ryu, Student Presentation Seoul National University
    Ogyun Seok, Kumoh National Institute of Technology
    Minseok Kim, Student Presentation Seoul National University
    Ho-Young Cha, Student Presentation Seoul National University
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  • The Effects of SF6Plasma and in-situ N2Plasma Treatment on Gate Leakage, Subthreshold Slope, and Current Collapse in AlGaN/GaN HEMTs

    Neung-Hee Lee, Seoul National University
    Woojin Choi, Seoul National University
    Minseong Lee, Seoul National University
    Seonhong Choi, Seoul National University
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