X. Zhao

Massachusetts Institute of Technology

  • 3.2 A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs

    A Vardi, Massachusetts Institute of Technology
    J. Lin, Massachusetts Institute of Technology
    W. Lu, Massachusetts Institute of Technology
    X. Zhao, Massachusetts Institute of Technology
    J. del Alamo, Massachusetts Institute of Technology
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  • May 19, 2022 // 2:10pm

    17.3 Regrown Ohmic contact of InAlN/GaN HEMTs based on MOCVD

    Jingshu Guo, Xidian University, Xi'an, China
    Jiejie Zhu, Xidian University, Xi'an, China
    Siyu Liu, Xidian University, Xi'an, China
    Jiahao Xu, Xidian University, Xi'an, China
    X. Zhao, Massachusetts Institute of Technology
    Ma Xiaohua, Xidian University, Xi'an, China

    Student Presentation

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