Wet-etching issues in type-II DHBT process fabricated by standard triple-mesa wet-etching have been identified and reported in this paper. For comparison, devices fabricated by hybrid-etching with incorporation of inductively-coupled-plasma (ICP) are also present. With better uniformity and yield, hybrid-etching process can potentially lead to a more reliable and reproducible process for 5G power amplifier application.
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Wet-etching Process Problem Identification in Type-II InP DHBT for 5G Power Application
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19.3 40 Gb/s VCSELs Test Data Collection, Analysis, and Process Problem Identification
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9.5.2021 Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors
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14.4.2023 Developing Single-Mode VCSEL for Extending High-Speed PAM4 Transmitting Distance in SMF-28 Fiber Up to 1 km and 70 °C
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