Wet-etching issues in type-II DHBT process fabricated by standard triple-mesa wet-etching have been identified and reported in this paper. For comparison, devices fabricated by hybrid-etching with incorporation of inductively-coupled-plasma (ICP) are also present. With better uniformity and yield, hybrid-etching process can potentially lead to a more reliable and reproducible process for 5G power amplifier application.
Xin Yu
University of Illinois at Urbana-Champaign
-
Wet-etching Process Problem Identification in Type-II InP DHBT for 5G Power Application
Milton Feng, University of Illinois Urbana-ChampaignYu-Ting Peng, University of Illinois at Urbana ChampaignXin Yu, University of Illinois at Urbana-ChampaignDownload Paper -
19.3 40 Gb/s VCSELs Test Data Collection, Analysis, and Process Problem Identification
Download PaperJunyi Qiu, University of Illinois at Urbana-ChampaignHsiao-Lun Wang, University of Illinois at Urbana-ChampaignCurtis Wang, University of Illinois at Urbana-ChampaignXin Yu, University of Illinois at Urbana-ChampaignMilton Feng, University of Illinois Urbana-Champaign -
9.5.2021 Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors
Dufei Wu, University of Illinois at Urbana ChampaignXin Yu, University of Illinois at Urbana-ChampaignYu-Ting Peng, University of Illinois, Urbana-ChampaignMilton Feng, University of Illinois, Urbana-ChampaignDownload Paper[embeddoc url=”http://csmantech.org/wp-content/uploads/Digest/Digests-2021/9.5.2021-CSMANTECH-2021-Extended-Abstract_DufeiWu.pdf” download=”all” viewer=”google”]