Wet-etching issues in type-II DHBT process fabricated by standard triple-mesa wet-etching have been identified and reported in this paper. For comparison, devices fabricated by hybrid-etching with incorporation of inductively-coupled-plasma (ICP) are also present. With better uniformity and yield, hybrid-etching process can potentially lead to a more reliable and reproducible process for 5G power amplifier application.
Xin Yu
University of Illinois at Urbana-Champaign
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Wet-etching Process Problem Identification in Type-II InP DHBT for 5G Power Application
Milton Feng, University of Illinois Urbana-ChampaignYu-Ting Peng, University of Illinois at Urbana ChampaignXin Yu, University of Illinois at Urbana-ChampaignDownload Paper -
19.3 40 Gb/s VCSELs Test Data Collection, Analysis, and Process Problem Identification
Junyi Qiu, University of Illinois at Urbana-ChampaignHsiao-Lun Wang, University of Illinois at Urbana-ChampaignCurtis Wang, University of Illinois at Urbana-ChampaignXin Yu, University of Illinois at Urbana-ChampaignMilton Feng, University of Illinois Urbana-Champaign -
May 10, 2022 // 3:20pm
10.5 Hybrid Etching Process in Sub-micron Type-II GaAsSb/InP DHBT for 5G and millimeter-wave Power Amplification
Yu-Ting Peng, University of Illinois at Urbana ChampaignXin Yu, University of Illinois at Urbana-ChampaignMilton Feng, University of Illinois, Urbana-ChampaignYulin He, University of Illinois Urbana-ChampagneDownload Paper