Y. -R. Kim

Qorvo

  • 4B.2 – Cu Bumps with Ni Barrier and On-Wafer Reflow for Improved Reliability & Manufacturability

    S. Pilla, Qorvo
    Z. Zhang, Qorvo
    Y. -R. Kim, Qorvo
    Gergana Drandova, Qorvo, Inc.
    V. Li, Qorvo, Inc.

    4B.2 Final.2025

    Abstract
    This paper discusses Qorvo’s recent release of Cu Pillar (CuP) interconnect technology with Ni barrier on high frequency Gallium Nitride (GaN) HEMTs fabricated on Silicon Carbide (SiC) 150 mm substrates. Ongoing multi-temperature High Temperature Storage (HTS) tests indicate > 2×106 h median lifetime for CuP joints at 85ºC. Different types of CuP Ni plating are being studied which display a difference in lifetimes. Results demonstrate the use of ENEPIG finish on the laminate substrates could further increase CuP solder-joint reliability, allowing their use at temperatures up to 125ºC.