Y. Yoshizumi

Sumiden Semiconductor Materials Co Sumitomo Electric Industries

  • 16.4 Development of Non-Core 4-inch GaN Substrate

    Hideki Osada, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
    Y. Yoshizumi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
    K. Uematsu, Sumitomo Electric Industries, Ltd.
    S. Minobe, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
    F. Sato, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
    F. Nakanisihi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
    Y. Yamamoto, Sumitomo Electric Industries, Ltd.
    Y. Yabuhara, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
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  • 7A.2 – Development of 6-Inch Indium Phosphide Substrates

    Y. Oeki, Sumiden Semiconductor Materials Co., Ltd.
    K. Aoyama, Sumiden Semiconductor Materials Co., Ltd.,
    K. Hashio, Sumiden Semiconductor Materials Co., Ltd.,
    M. Adachi, Sumiden Semiconductor Materials Co., Ltd.,
    Y. Yoshizumi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
    Yoshiaki Hagi, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd, Itami
    Tomonori Morishita, Sumiden Semiconductor Materials Co., Ltd., Sumitomo Electric Industries, Ltd

    7A.2 Final.2025

    Abstract
    In this paper, we report 6-inch indium phosphide (InP) substrates with very low dislocation density produced using SEI’s Vertical Boat (VB) method. The growth conditions have been optimized to reduce crystal defects.