Yi-Che Lee
Georgia Institute of Technology
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GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2
Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingYi-Che Lee, Georgia Institute of TechnologyZachary Lochner, Georgia Institute of TechnologyHee Jin Kim, Lumileds LLCJae-Hyun Ryou, Georgia Institute of TechnologyRussell D. Dupuis, Georgia Institute of Technology -
Threshold Voltage Control of Recessed-Gate III-N HFETs Using an Electrode-less Wet Etching Technique
Yi-Che Lee, Georgia Institute of TechnologyCheng-Yin Wang, Georgia Institute of TechnologyTsung-Ting Kao, Georgia Institute of Technology,