Yi-Che Lee

Georgia Institute of Technology
  • GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2

    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    Yi-Che Lee, Georgia Institute of Technology
    Zachary Lochner, Georgia Institute of Technology
    Hee Jin Kim, Georgia Institute of Technology
    Jae-Hyun Ryou, Georgia Institute of Technology
    Russell D. Dupuis, Student Presentation
  • Threshold Voltage Control of Recessed-Gate III-N HFETs Using an Electrode-less Wet Etching Technique

    Yi-Che Lee, Georgia Institute of Technology
    Cheng-Yin Wang, Georgia Institute of Technology
    Tsung-Ting Kao, Georgia Institute of Technology,