Yijun Shi
University of Electronic Science and Technology of China
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4.4 Improved Uniformity on E-mode GaN-on-Si MIS-HEMTs Fabrication by High-Temperature Gate Recess Technique
Download PaperJinhan Zhang, University of Electronic Science and Technology of ChinaSen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of ScienceXuanwu Kang, Institute of Microelectronics, Chinese Academy of SciencesXinhua Wang, Institute of Microelectronics, Chinese Academy of SciencesKe Wei, Institute of Microelectronics, Chinese Academy of SciencesYijun Shi, University of Electronic Science and Technology of ChinaQi Zhou, University of Electronic Science and Technology of ChinaWanjun Chen, University of Electronic Science and Technology of ChinaBo Zhang, University of Electronic Science and Technology of ChinaXinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences