Yinbao Yang

Qorvo, Inc.
  • Backside Via Process of GaN Device Fabrication

    Ju-Ai Ruan, Qorvo Inc.
    Craig Hall, Qorvo
    Celicia Della-Morrow, TriQuint Semiconductor
    Tom Nagle, Qorvo, Inc.
    Yinbao Yang, Qorvo, Inc.
  • 17.3 The Mechanism of Cu Seed Residue Formation

    Linlin Huang, Qorvo, Inc
    Yinbao Yang, Qorvo, Inc.
    Xiaokang Huang, Qorvo
    David Gonzalez, Qorvo, Inc.
    Gaurav Gupta, Qorvo
    John Gibbon, Qorvo
    Louis Breaux, Qorvo
    Duofeng Yue, Qorvo, Inc.
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  • 20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)

    Yongjie Cui, Qorvo Inc.
    John Hitt, Qorvo Inc.
    Tso-Min Chou, Qorvo Inc.
    Shuoqi Chen, Qorvo Inc.
    David Gonzalez, Qorvo, Inc.
    Yinbao Yang, Qorvo, Inc.
    Trish Smith, Qorvo Inc.
    Ju-Ai Ruan, Qorvo Inc.
    Vivian Li, Qorvo Inc.
    Cathy Lee, Qorvo Inc.
    Andrew Ketterson, Qorvo Inc.
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  • 6a.4 Ablation┬áLaser Dicing for GaN HEMT Device on 100um SiC/Au Substrates

    Vivian Li, Qorvo Inc.
    Wade Skelton, Qorvo Inc.
    Yinbao Yang, Qorvo, Inc.
    Andrew Ketterson, Qorvo Inc.
    Michael Lube, Qorvo
    Harold Isom, Qorvo
    Cathy Lee, Qorvo Inc.
    Rob Kraft, Qorvo Inc.
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