Ying-Jie Tsaia

a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology

  • Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN/Silicon HEMT Structure

    Fu-Chuan Chua, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
    Ying-Jie Tsaia, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
    Sheng-Yu Liaoa, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
    Chou-Shuang Huanga, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
    Ray-Ming Lina, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
    Sheng-Fu Yub, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology
    Shuh-Sen Renc, a) Chang Gung University b) Center National Cheng Kung University c) Chung Shan Institute of Science and Technology