Yohei Otoki

SCIOCS

  • Role of Buffer Layers of High Power GaAs MESFETs for Higher Output Power

    Junichiro Takeda, Hitachi Cable
    Yohei Otoki, SCIOCS
    Tadayoshi Tsuchiya, Hitachi Cable
    Takeshi Meguro, Hitachi Cable
    Yukio Sasaki, Hitachi Cable

  • What Happened, What Was Done and What Was Learned in CS Industry through Catastrophic Disasters in Japan

    Yohei Otoki, SCIOCS

  • 7.1 Real potential of GaN electric devices coming from GaN on GaN

    Yohei Otoki, SCIOCS
    Hajime Fujikura, SCIOCS
    Takefumi Yoshida, SCIOCS
    Fumimasa Harikiri, SCIOCS
    Tetsuji Fujimoto, SCIOCS
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  • Session D: GaN-on-XxX – Selecting A Substrate Is Getting Complicated!

    Yohei Otoki, SCIOCS
  • May 12, 2022 // 10:40am

    14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems

    Yohei Otoki, SCIOCS
    Masatomo Shibata, SCIOCS
    Tomoyoshi Mishima, Osaka University
    Hiroshi Ohta, Osaka University
    Y. Mori, Osaka University
    Keiji Watanabe, Fujitsu Laboratories Ltd.
    Naoya Okamoto, Fujitsu Laboratories Ltd.
    Masayoshi Yamamoto, Nagoya University
    Koji Shiozaki, Nagoya University
    Satoshi Tamura, Panasonic Corporation
    Masayuki Imanishi, Osaka University
    Kazunori Kidera, Panasonic Corporation
    Junichi Takino, Panasonic Corporation
    Yoshio Okayama, Panasonic Corporation
    Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
    Hiroshi Amano, Nagoya University
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