Abstract
We developed high-power and high-reliability quaternary InAlGaN/GaN HEMTs via TCVD SiNx passivation. This passivation technique achieves lower sheet resistance and higher-voltage operation for an InAlGaN/GaN HEMT compared with PECVD SiNx passivation. Moreover, it yields a record-high output power density of 31.0 W/mm in the X-band. Furthermore, we demonstrated that the InAlGaN/GaN HEMT with TCVD SiNx passivation is highly reliable.
Yoichi Kamada
Fujitsu Laboratories
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3.2 Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric
Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.Yoichi Kamada, Fujitsu LaboratoriesMasaru Sato, Fujitsu Laboratories LTD.Yoshitaka Niida, Fujitsu Laboratories LTD.Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.Kazukiyo Joshin, Fujitsu Laboratories Ltd. -
4A.1 – X-band InAlGaN/GaN HEMT with High-Power and High-Reliability
Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.Yoichi Kamada, Fujitsu LaboratoriesYuichi Minoura, Fujitsu Laboratories Ltd.Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.M. Sato, Fujitsu Limited