Yoshitaka Niida

Fujitsu Laboratories LTD.

  • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

    Motonobu Sato, Fujitsu Laboratories Ltd.
    Yasushi Kobayashi, Fujitsu Laboratories LTD.
    Yoshitaka Niida, Fujitsu Laboratories LTD.
    Kenji Saito, Fujitsu Laboratories LTD.
    Naoko Kurahashi, Fujitsu Laboratories LTD.
    Ayumi Okano, Fujitsu Laboratories LTD.
    Yukio Ito, Fujitsu Laboratories LTD.
    Teruo Kurahashi, Fujitsu Laboratories LTD.
    Shinya Iijima, Fujitsu Laboratories LTD.
    Yoshihiro Nakata, Fujitsu Laboratories LTD.
    Masaru Sato, Fujitsu Laboratories LTD.
    Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
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  • 3.2 Millimeter-wave GaN HEMTs with Cavity-gate Structure Using MSQ-based Inter-layer Dielectric

    Shiro Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Kozo Makiyama, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Yoichi Kamada, Fujitsu Laboratories
    Masaru Sato, Fujitsu Laboratories LTD.
    Yoshitaka Niida, Fujitsu Laboratories LTD.
    Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Kazukiyo Joshin, Fujitsu Laboratories Ltd.
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