Yun Zhang
Institute of Semiconductors, Chinese Academy of Sciences, Beijing
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April 30, 2019 // 5:20pm – 5:40pm
4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss
Download PaperYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingQiong Feng, Institute of Semiconductors,Chinese Academy of SciencesYujie Ai, Institute of Semiconductors, Chinese Academy of SciencesZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLifang Jia, Institute of Semiconductors, Chinese Academy of SciencesBoyu Dong, NAURA Technology Group Co., Ltd.Baohui Zhang, NAURA Technology Group Co, Ltd. -
GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2
Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingYi-Che Lee, Georgia Institute of TechnologyZachary Lochner, Georgia Institute of TechnologyHee Jin Kim, Lumileds LLCJae-Hyun Ryou, Georgia Institute of TechnologyRussell D. Dupuis, Georgia Institute of Technology, Atlanta, GA -
10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire
Download PaperShuai Yang, Institute of Semiconductors, Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing -
14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter
Download PaperLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, ChinaZhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, BeijingHongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, BeijingYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing -
14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template
Download PaperRuxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingC. Chen, Momentive TechnologiesLian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing -
12.7 Improvement of Light Extraction Efficiency of AlGaN-based Deep-ultraviolet Light Emitting Diodes
Download PaperYanan Guo, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesYun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, BeijingJianchang Yan, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesXiang Chen, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of SciencesTongbo WeiJunxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, BeijingJinmin Li, NAURA Technology Group Co., Ltd.