Yun Zhang

Institute of Semiconductors, Chinese Academy of Sciences, Beijing
  • April 30, 2019 // 5:20pm – 5:40pm

    4.5 High-quality AlN/sapphire-based Surface Acoustic Wave Filter With 5.75 dB Insertion Loss

    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    Qiong Feng, Institute of Semiconductors,Chinese Academy of Sciences
    Yujie Ai, Institute of Semiconductors, Chinese Academy of Sciences
    Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Lifang Jia, Institute of Semiconductors, Chinese Academy of Sciences
    Boyu Dong, NAURA Technology Group Co., Ltd.
    Baohui Zhang, NAURA Technology Group Co, Ltd.
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  • GaN/InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA/cm2

    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    Yi-Che Lee, Georgia Institute of Technology
    Zachary Lochner, Georgia Institute of Technology
    Hee Jin Kim, Georgia Institute of Technology
    Jae-Hyun Ryou, Georgia Institute of Technology
    Russell D. Dupuis, Student Presentation
  • 10.4 Impact of device parameter on performance of SAW resonators on AlN/sapphire

    Shuai Yang, Institute of Semiconductors, Chinese Academy of Sciences
    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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  • 14.5 AlGaN/GaN hetero-junction bipolar transistor with selective-area regrown n-type AlGaN emitter

    Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Jianping Zeng, Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, 610299, China
    Zhe Cheng, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Hongxi Lu, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Hongrui Lv, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
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  • 14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template

    Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    Chen
    Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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  • 12.7 Improvement of Light Extraction Efficiency of AlGaN-based Deep-ultraviolet Light Emitting Diodes

    Yanan Guo, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    Jianchang Yan, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    Xiang Chen, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    Tongbo Wei
    Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Jinmin Li, NAURA Technology Group Co., Ltd.
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