Yuying Chen

Hong Kong University of Science and Technology

  • 20.9 Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric

    Huaxing Jiang, Hong Kong University of Science and Technology
    Chao Liu, Hong Kong University of Science and Technology
    Yuying Chen, Hong Kong University of Science and Technology
    Chak Wah Tang, Hong Kong University of Science and Technology
    Kei May Lau, Hong Kong University of Science and Technology
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