Z. Chen

University of Arkansas, Fayetteville
  • May 12, 2022 // 2:50pm

    17.5 High-Temperature SiC Power Module with Integrated LTCC-Based Gate Driver

    P. Lai, University of Arkansas, Fayetteville
    S. Chinnaiyan, University of Arkansas, Fayetteville
    S. Ahmed, University of Arkansas, Fayetteville
    A. Mantooth, University of Arkansas, Fayetteville
    Z. Chen, University of Arkansas, Fayetteville
    D. Gonzalez, University of Arkansas, Fayetteville

    Student Presentation

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  • 11B.1 – Use of E-beam Lithography to Optimize Lithography Patterning on SiC Wafers

    K. Chen, University of Arkansas
    Z. Feng, University of Arkansas
    S. Williams, Multibeam Corp.
    R. Van Art, Multibeam Corp.
    A. Ceballos, Multibeam Corp.
    T. Prescop, Multibeam Corp.
    K. MacWilliams, Multibeam Corp.
    Z. Chen, University of Arkansas, Fayetteville

    11B.1 Final.2025

    Abstract
    Silicon carbide (SiC) is a wide bandgap semiconductor material used to manufacture high-voltage and high-temperature operating devices. As SiC technology continues to advance, the density of devices across a wafer increases as transistors become smaller. On commonly used 6-inch SiC wafers, the wafers are subject to wafer bowing due to the physical hardness of the material. Conventional photolithography can lead to resolution inconsistencies across the wafer and significantly reduce yield. Cross-wafer yield is a challenge that can be addressed with e-beam lithography. E-beam direct-write lithography demonstrates superior fidelity of nanoscale features due to its great depth of focus over challenging topography on 6-inch and greater diameter SiC wafers.