Zhaofu Zhang

The Hong Kong University of Science and Technology

  • 18.4 TDDB and PBTI Characterizations of Fully-Recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

    Mengyuan Hua, The Hong Kong University of Science and Technology
    Qingkai Qian, The Hong Kong University of Science and Technology
    Jin Wei, The Hong Kong University of Science and Technology
    Zhaofu Zhang, The Hong Kong University of Science and Technology
    Gaofei Tang, The Hong Kong University of Science and Technology
    Kevin Chen, The Hong Kong University of Science and Technology
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  • 5.4 Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric

    Jiabei He, The Hong Kong University of Science and Technology
    Mengyuan Hua, The Hong Kong University of Science and Technology
    Zhaofu Zhang, The Hong Kong University of Science and Technology
    Gaofei Tang, The Hong Kong University of Science and Technology
    Kevin J. Chen, The Hong Kong University of Science and Technology
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  • 5.5 Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study

    Zhaofu Zhang, The Hong Kong University of Science and Technology
    Mengyuan Hua, The Hong Kong University of Science and Technology
    Jiabei He, The Hong Kong University of Science and Technology
    Qingkai Qian, The Hong Kong University of Science and Technology
    Kevin J. Chen, The Hong Kong University of Science and Technology
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