11.2.5.2024 Characterization of 1.2 kV SiC Trench MOSFETs with Buried p+ Layers Using a Double-Pulse Circuit

Yeongeun Park, Kumoh National Institute of Technology
Gyuhyeok Kang, Kumoh National Institute of Technology
Sangyeob Kim, Kumoh National Institute of Technology
Hyowon Yoon, Kumoh National Institute of Technology
Soontak Kwon, KEC, Republic of Korea
Ogyun Seok, Kumoh National Institute of Technology
Loader Loading...
EAD Logo Taking too long?

Reload Reload document
| Open Open in new tab

Download [858.90 KB]