May 10, 2022 // 2:40pm

2.3 Advanced MOCVD Technology for RF-HEMT Growth on SEMI-Standard Large-Area (111) Silicon Substrates

C. Mauder, AIXTRON SE
H. Hahn, AIXTRON SE, Herzogenrath, Germany
Z. Gao, AIXTRON SE
M. Marx, AIXTRON SE, Herzogenrath, Germany
T. Zweipfennig, RWTH Aachen University, Germany
J. Ehrler, RWTH Aachen University, Germany
H. Kalisch, RWTH Aachen University, Germany
J. Bolton, AMO GmbH, Aachen Germany
M. Lemme, AMO GmbH, Aachen Germany
A. Alian, Imec
B. Parvais, imec vzw, Leuven, Belgium
M. Zhao, imec vzw, Leuven, Belgium
Michael Heuken, AIXTRON SE
A. Vescan, RWTH Aachen University, Germany
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