2.3 Advanced MOCVD Technology for RF-HEMT Growth on SEMI-Standard Large-Area (111) Silicon Substrates

May 10, 2022 // 2:40pm

C. Mauder, AIXTRON SE

H. Hahn, AIXTRON SE, Herzogenrath, Germany

Z. Gao, AIXTRON SE

M. Marx, AIXTRON SE, Herzogenrath, Germany

T. Zweipfennig, RWTH Aachen University, Germany

J. Ehrler, RWTH Aachen University, Germany

H. Kalisch, RWTH Aachen University, Germany

J. Bolton, AMO GmbH, Aachen Germany

M. Lemme, AMO GmbH, Aachen Germany

A. Alian, Imec

B. Parvais, imec vzw, Leuven, Belgium

M. Zhao, imec vzw, Leuven, Belgium

Michael Heuken, AIXTRON SE

A. Vescan, RWTH Aachen University, Germany

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