2.5.2023 Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz

In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
Wan-Soo Park, School of Electronic and Electrical Engineering, Kyungpook National University
Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
Jacob Yun, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
Ted Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
Jae-Hak Lee, School of Electronic and Electrical Engineering, Kyungpook National University
Dae-Hyun Kim, School of Electronic and Electrical Engineering, Kyungpook National University

2.5,2023_Lee_Final_Paper