2.5.2023 Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz

In-Geun Lee, Kyungpook National University

Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University

Wan-Soo Park, Kyungpook National University

Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University

Jacob Yun, QSI

Ted Kim, QSI

Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea

Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan

Jae-Hak Lee, Kyungpook National University

Dae-Hyun Kim, Kyungpook National University