Abstract
Vertical GaN MOSFETs are a promising technology for next generation efficient power systems. Here we investigate the effect of operating temperature on the on-state performance of quasi-vertical GaN MOSFETs, fabricated on SiC substrates. The threshold voltage, transconductance and on-resistance were extracted from measured characteristics across a range of temperatures. Shifts in both threshold voltage and transconductance are attributed to temperature dependent trapping-detrapping at the MOS interface. These are discussed in relation to series resistance contributions in the channel, drift layer and access resistances at the source and drain contacts.