5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer

Hossein Yazdani, Ferdinand-Braun-Institut,
Serguei Chevtchenko, Ferdinand-Braun-Institut,
Ina Ostermay, Ferdinand-Braun-Institut
Joachim Würfl, Ferdinand-Braun-Institut
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