5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer

Hossein Yazdani, Ferdinand-Braun-Institut,
Serguei Chevtchenko, Ferdinand-Braun-Institut,
Joachim Würfl, Ferdinand-Braun-Institut
Loader Loading...
EAD Logo Taking too long?

Reload Reload document
| Open Open in new tab

Download [162.00 B]

Download Paper