May 10, 2022 // 4:50pm

5.3 Normally-off InAlN/GaN HEMTs Fabricated by Atomic Layer Etching Gate Recess

Siyu Liu, Xidian University, Xi'an, China
Ma Xiaohua, Xidian University, Xi'an, China
Jiejie Zhu, Xidian University, Xi'an, China
Minhan Mi, Xidian University
Jingshu Guo, Xidian University, Xi'an, China
Yue Hao, Xidian University, Xi'an, China

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