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7.5.2023 Improving the yield for GaN-on-Si HEMT devices for power applications
D. Fahle, AIXTRON SE Germany
C. Mauder, AIXTRON SE
H. Hahn, AIXTRON SE
Z. Gao, AIXTRON SE
Niels Posthuma, Imec
Stefaan Decoutere, Imec, Leuven, Belgium
7.5.2023_Improving the yield for GaN-on-Si HEMT devices for power applications_extended_v2
