7.5.2023 Improving the yield for GaN-on-Si HEMT devices for power applications

D. Fahle, AIXTRON SE Germany

C. Mauder, AIXTRON SE, Herzogenrath, Germany

H. Hahn, AIXTRON SE

Z. Gao, AIXTRON SE, Herzogenrath, Germany

Niels Posthuma, Imec

Stefaan Decoutere, Imec, Leuven, Belgium