13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform

March 10, 2022 // 8:45am

Cem Basceri, QROMIS, USA

Vlad Odnoblyudov, QROMIS, USA

O. Aktas, Sandia National Labs, Albuquerque, NM

Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan

Karen Geens, imec, Leuven, Belgium

Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium

H. Hahn, AIXTRON SE, Herzogenrath, Germany

D. Fahle, AIXTRON SE Germany

Stefaan Decoutere, Imec, Leuven, Belgium

A. Vohra, imec, Leuven, Belgium

M. Heuken, AIXTRON SE Germany

Invited Presentation

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