March 10, 2022 // 8:45am

13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform

Cem Basceri, QROMIS, USA
Vlad Odnoblyudov, QROMIS, USA
O. Aktas, Sandia National Labs, Albuquerque, NM
Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
Karen Geens, imec, Leuven, Belgium
Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
H. Hahn, AIXTRON SE, Herzogenrath, Germany
D. Fahle, AIXTRON SE Germany
Stefaan Decoutere, Imec, Leuven, Belgium
A. Vohra, imec, Leuven, Belgium
M. Heuken, AIXTRON SE Germany

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