May 12, 2022 // 3:20pm

18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs

Kevin Riddell, SPTS, Newport, UK
A. Croot, KLA Corporation (SPTS Division)
C. Bolton, SPTS, Newport, UK
B. Jones, Swansea University
F. Monaghan, Swansea University, Swansea, UK
J. Mitchell, KLA Corporation (SPTS Division)
M. R. Jennings, Swansea University, Swansea, UK
O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
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