May 12, 2022 // 3:20pm

18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs

Kevin Riddell, SPTS, Newport, UK
A. Croot, SPTS, Newport, UK
C. Bolton, SPTS, Newport, UK
H. Ashraf, SPTS, Newport, UK
B. Jones, Swansea University, Swansea, UK
F. Monaghan, Swansea University, Swansea, UK
J. Mitchell, Swansea University, Swansea, UK
M. R. Jennings, Swansea University, Swansea, UK
O. J. Guy, Swansea University, Swansea, UK

Abstract

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