A. Vohra

imec, Leuven, Belgium
  • March 10, 2022 // 8:45am

    13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform

    Cem Basceri, QROMIS, USA
    Vlad Odnoblyudov, QROMIS, USA
    O. Aktas, Sandia National Labs, Albuquerque, NM
    Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
    Karen Geens, imec, Leuven, Belgium
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    H. Hahn, AIXTRON SE, Herzogenrath, Germany
    D. Fahle, AIXTRON SE Germany
    Stefaan Decoutere, Imec, Leuven, Belgium
    A. Vohra, imec, Leuven, Belgium
    M. Heuken, AIXTRON SE Germany

    Invited Presentation

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  • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

    C. Basceri, Qromis, Inc.
    V. Odnoblyudov, Qromis, inc.
    C. Kurth, Qromis, Inc.
    M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
    S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
    M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
    C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    Karen Geens, imec, Leuven, Belgium
    A. Vohra, imec, Leuven, Belgium
    H. De Pauw, CMST, imec & Ghent University
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    S. Decoutere, imec
    H. Hahn, AIXTRON SE
    M. Heuken, AIXTRON SE
    K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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