This work characterizes the effects of gate-length (LG) scaling in a self-aligned gate (SAG) β-Ga2O3 MOSFET process. Additional performance gains are expected by extending the SAG process from large LG to sub-micrometer dimensions. This data incorporates LG scaling down to 200 nm to improve device performance in Ga2O3 SAG MOSFETs using a stepper lithography process to define sub-micron gate lengths.
Andrew Green
Air Force Research Laboratory
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Self-Aligned Refractory Metal Gate Scaling in β-Ga2O3 MOSFETs
Kelson Chabak, Air Force Research LaboratoryKyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAAndrew Green, Air Force Research LaboratoryThaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USAShin Mou, Air Force Research Laboratory, Wright Patterson AFB, OHKevin Leedy, AFRLDonald Dorsey, Air Force Research Laboratory Materials and Manufacturing DirectorateDownload Paper -
14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications
Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Kelson Chabak, Air Force Research LaboratoryAndrew Green, Air Force Research LaboratoryDennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAStephen Tetlak, AFRLEric Heller, AFRLAntonio Crespo, AFRLRobert Fitch, AFRLJonathan McCandless, AFRLKevin Leedy, AFRLMichele Baldini, Leibniz-Institut für KristallzüchtungGuenter Wagner, Leibniz-Institut für KristallzüchtungGlen Via, AFRLJohn Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OHGregg Jessen, AFRL -
May 11, 2022 // 11:40am
8.3 Device Figure of Merit Performance of Scaled Gamma-Gate β-Ga2O3 MOSFETs
Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAAhmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAJeremiah Williams, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USADennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USANeil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,Kelson Chabak, Air Force Research LaboratoryAndrew Green, Air Force Research LaboratoryDaniel Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAN. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA -
May 10, 2022 // 4:50pm
4.3 Transfer of the AFRL 0.14 μm AlGaN/GaN-on-SiC MMIC Process to MACOM’s Commercial Fab
G. Cueva, MACOME. Werner, KBR, Wright-Patterson AFBA. Islam, Air Force Research LaboratoryN. Miller, Air Force Research LaboratoryA. Crespo, Air Force Research LaboratoryN. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAD. Walker Jr., Air Force Research LaboratoryGary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OHR. Fitch, Air Force Research LaboratoryK. Chabak, Air Force Research LaboratoryAndrew Green, Air Force Research LaboratoryKyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA -
3.5.2021 LOL 1000 Liftoff Resist as an Antireflective Coating for MMIC Electroplating
Elizabeth Werner, KBRDaniel Brooks, Air Force Research LaboratoryKyle Liddy, Air Force Research LaboratoryRobert Fitch Jr., Air Force Research LaboratoryJames Gillespie, Air Force Research LaboratoryDennis Walker Jr., Air Force Research LaboratoryAntonio Crespo, Air Force Research LaboratoryDaniel M. Dryden, KBRAndrew Green, Air Force Research LaboratoryKelson Chabak, Air Force Research LaboratoryDownload PaperLoading...