B. Parvais

imec vzw, Leuven, Belgium
  • May 10, 2022 // 2:40pm

    2.3 Advanced MOCVD Technology for RF-HEMT Growth on SEMI-Standard Large-Area (111) Silicon Substrates

    C. Mauder, AIXTRON SE
    H. Hahn, AIXTRON SE, Herzogenrath, Germany
    Z. Gao, AIXTRON SE
    M. Marx, AIXTRON SE, Herzogenrath, Germany
    T. Zweipfennig, RWTH Aachen University, Germany
    J. Ehrler, RWTH Aachen University, Germany
    H. Kalisch, RWTH Aachen University, Germany
    J. Bolton, AMO GmbH, Aachen Germany
    M. Lemme, AMO GmbH, Aachen Germany
    A. Alian, Imec
    B. Parvais, imec vzw, Leuven, Belgium
    M. Zhao, imec vzw, Leuven, Belgium
    Michael Heuken, AIXTRON SE
    A. Vescan, RWTH Aachen University, Germany
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  • 4.2.1.2024 (Invited) Silicon Meets Compound Semiconductors: Pioneering Wireless Communications

    N. Collaert, Imec
    R. Alcotte, Imec
    A. Alian, Imec
    M. Asad, Imec
    I. Bagal, Imec
    S. Banerjee, imec
    G. Boccardi, Imec
    P. Cardinael, Imec and Université catholique de Louvain
    I. Comart, imec & Vrije Universiteit Brussels
    D. Desset, Imec
    R. ElKashlan, Imec
    F. Filice, Imec
    G. Gramegna, Imec
    H. Jafarpoorchekab, Imec
    A. Khaled, Imec
    A. Kumar, Imec
    B. Kunert, Imec
    Y. Mols, Imec
    B. O’Sullivan, Imec
    S. Park, Imec
    U. Peralagu, Imec
    N. Pinho, Imec
    A. Rathi, Imec
    A. Sibaja-Hernandez, Imec
    S. Sinha, Imec
    D. Smellie, Imec
    X. Sun, Imec
    A. Vais, Imec
    B. Vanhouche, Imec
    B. Vermeersch, Imec
    D. Xiao, Imec
    S. Yadav, Imec
    D. Yan, Imec
    H. Yu, Imec
    Y. Zhang, Imec
    J. Van Driessche, Imec
    P. Wambacq, Imec
    M. Peeters, Imec
    B. Parvais, imec & Vrije Universiteit Brussels

    4.2.1.2024 Silicon Meets Compound Semiconductors

  • 4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

    G. Boccardi, Imec
    A. Vais, Imec
    A. Kumar, Imec
    S. Yadav, Imec
    Y. Mols, Imec
    R. Alcotte, Imec
    L. Witters, Imec
    J. De Backer, Imec
    A. Mingardi, Imec
    A. Milenin, Imec
    K. Vandersmissen, Imec
    N. Heylen, Imec
    K. Ceulemans, Imec
    D. Goossens, Imec
    F. Sebaai, Imec
    J-P Soulié, Imec
    R. Langer, Imec
    B. Kunert, Imec
    B. Parvais, imec vzw, Leuven, Belgium
    N. Collaert, Imec

    4.2.3.2024 A monolithic III-V on Si integration technology utilizing 300mm CMOS platform

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  • 5.2 – CMOS-Compatible Compound Semiconductors at imec

    B. Parvais, imec vzw, Leuven, Belgium

    5.2 Final.2025

    Abstract
    We present an overview of the solutions developed at imec for the manufacture of compound semiconductors in a CMOS-compatible process scalable to 300mm wafer size. Pioneering GaN-on-Si for more than a decade for power electronics, operation at 1200V is now possible. We demonstrate that GaN-on-Si can also achieve state-of-the art performance for 5G/6G wireless applications, both for base stations and user’s equipment. Cutting-edge InP-on-Silicon solutions are proposed for higher data rate wireless communication systems. A Si photonics platform including integrated light sources is proposed as a solution to the interconnect wall which constraints AI systems. The role of engineered substrates is discussed.

  • 7A.1 – First Demonstration of InP HBTs on InP-on-Si (InPOSi) Substrate: A Cost-Effective and Sustainable III/V-on-Si Technology for Advanced RF Applications

    A. Vais, Imec
    A. Kumar, Imec
    S. Yadav, Imec
    G. Boccardi, Imec
    Y. Mols, Imec
    R. Alcotte, Imec
    B. Vermeersch, Imec
    U. Peralagu, Imec
    c. Roda Neve, SOITEC
    Bruno Ghyselen, SOITEC
    B. Parvais, imec vzw, Leuven, Belgium
    B. Kunert, Imec
    N. Collaert, Imec

    7A.1 Final.2025

    Abstract
    In this work, we present the first demonstration of InP HBTs grown and fabricated on an engineered InPOSi substrate. Physical and electrical characterizations were performed to measure its crystal quality and device performance. We show that the performance of devices fabricated on an InPOSi substrate is close to devices fabricated on a native InP substrates making such a technology suitable for advanced RF applications. Fabricated devices show ft/fmax of ~140 GHz/70GHz with BVceo/BVcbo of 3.5 V/5.5 V at an ON current density of 8mA/μm2.