Benoît Lambert

United Monolithic Semiconductors Germany
  • 10b.5 Transient Thermoreflectance for Device Temperature Assessment in Pulsed-Operated GaN-based HEMTs

    Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
    James Pomeroy, University of Bristol
    Benoît Lambert, United Monolithic Semiconductors Germany
    Helmut Jung, United Monolithic Semiconductors GmbH, Ulm, Germany
    Martin Kuball, University of Bristol
    Download Paper
  • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

    Hermann Stieglauer, United Monolithic Semiconductors Germany
    Klaus Riepe, United Monolithic Semiconductorss GmBH
    Janina Moereke, United Monolithic Semiconductorss GmBH
    Jan Grünenpütt, United Monolithic Semiconductors France
    Hervé Blanck, United Monolithic Semiconductors
    Daniel Sommer, United Monolithic Semiconductorss GmBH
    Benoît Lambert, United Monolithic Semiconductors Germany
    Jerome Van de Casteele, United Monolithic Semiconductorss SAS
    Mehdy Neffati, United Monolithic Semiconductorss SAS
    Ulli Hansen, MSG Lithoglas GmbH
    Simon Maus, MSG Lithoglas GmbH
    Loader Loading...
    EAD Logo Taking too long?

    Reload Reload document
    | Open Open in new tab

    Download [162.00 B]

    Download Paper