Boris Feigelson

Naval Research Laboratory
  • May 01, 2019 // 5:20pm – 5:40pm

    12.5 Activation of Ion Implanted Si in Semi-Insulating C-Doped GaN by High Pressure Annealing for Photoconductive Semiconductor Switch (PCSS) Applications

    Alan Jacobs, U.S. Naval Research Laboratory
    Boris Feigelson, Naval Research Laboratory
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  • 9.1 Improvements in the Annealing of Ion Implanted III-Nitride Materials and Related Devices

    Jordan Greenlee, NRC Postdoctoral Fellow Residing at the Naval Research Laboratory
    Boris Feigelson, Naval Research Laboratory
    Jennifer Hite, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Francis Kub, U.S. Naval Research Laboratory
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  • 15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices

    Alan Jacobs, U.S. Naval Research Laboratory
    Boris N. Feigelson, Naval Research Laboratory
    Jennifer Hite, U.S. Naval Research Laboratory
    Joseph Spencer, U.S. Naval Research Laboratory
    Marko Tadjer, U.S. Naval Research Laboratory
    Daniel G. Georgiev, University of Toledo, Toledo OH
    Raghav Khanna, University of Toledo, Toledo OH
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory

    15.5.2023 Alan Jacobs CS Mantech ExtAbstract_submission2